This might be right up yer alley:
New type of (unknown) non-volatile RAM from Intel using "charge resistance" or something similarly magically named.
- Faster, denser, cheaper than flashs SSDs. NO WEAR LIMIT. Can literally be nuked multiple times a day and never "runs out" of useful sectors like a flash SSD.
- Denser and cheaper than DRAM. (Slower, but still faster than Flash.)
- Non-volatile, retains state forver.
- Byte addressable (*)
- (Looks like it generates very low heat. Not mentioned, but I'm judging from heatsink on screenshot.)
- Working models already ready to ship, and 2x,4x,8x,16x size are coming within 6 months each 6 months.
- Planning 1.5 TB models in a year or two.
- Uses PCIe. (DIMM models are planned. What... why???)
(*) I have no idea why it's byte addressable. I was just mentioning to some friends that it's likely a side-effect of the technology and not a design decision. Not even RAM is byte addressable, it's ~64/128 bytes. (IIRC) And my guess would be that the reading and then writing needed to blast away a page/sector costs more using that technology than simply re-writing to a single byte, and perhaps at that form-factor nanometer process, the extra millions of transistors needed to select at the byte level is a mere drop in the ocean. That is, they traded "more transistors" (since we got more than we need!) for a "dumber" simpler addressing scheme (byte level), so they wouldn't need a "smarter" (=slower) but more compact addressing scheme using page level access--which requires for every write, a read of the page and then re-writing of the page which is pretty common for SSDs, physical HDDs, and even DRAM.
Obviously, it's just a guess but these guys are literal geniuses. So they wouldn't come up with "byte addressable" without a reason. Especially when they're targeting a market that already uses page-level addressing. Why would they change from "the norm"?
And while I know I'm just guessing, I'm excited for "Why?". Little things like that offer insight into the internal technology.